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| 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAFX11P50A 500 Volts 11 Amps 750 m P-CHANNEL ENHANCEMENT MODE POWER MOSFET Features * * * * * * * * High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request Maximum Ratings @ 25C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ 25C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM JC DRAIN MAX. 500 500 +/-20 +/-30 11 8 44 11 30 tbd 5.0 300 -55 to +150 -55 to +150 11 44 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns Watts C C Amps Amps C/W Drain-to-Gate Breakdown Voltage @ TJ 25C, RGS= 1 M Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current 100C Tj= 25C Tj= Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Voltage Rate of Change of the Recovery Diode @ IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case Mechanical Outline GATE SOURCE Datasheet# MSC0308A MSAFX11P50A Electrical Parameters @ 25C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Temperature Coefficient of the Drain-to-Source Breakdown Voltage Gate Threshold Voltage Temperature Coefficient of the Threshold Voltage Gate-to-Source Leakage Current Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Static Drain-to-Source On-State Resistance (1) Temperature Coefficient of the Drain-to-Source Resistance Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Body Diode Forward Voltage (1) Reverse Recovery Time (Body Diode) Reverse Recovery Charge SYMBOL BVDSS BVDSS/TJ VGS(th) VGSth /TJ IGSS IDSS RDS(on) RDSon/TJ gfs Ciss Coss Crss Td(on) tr td(off) tf Qg(on) Qgs Qgd VSD trr Qrr CONDITIONS VGS = 0 V, I D = 250 A MIN 500 TYP. 0.054 MAX UNIT V %/C VDS = VGS, ID =250 A VGS = 20VDC, VDS = 0 T J = 25C T J = 125C VDS =0.8*BVDSS TJ = 25C VGS = 0 V T J = 125C VGS= 10V, I D= 6A T J = 25C I D= 6A T J = 125C VDS 10 V; I D = 11 A VGS = 0 V, V DS = 25 V, f = 1 MHz 2.0 0.12 4.5 100 200 200 1000 0.75 1.4 0.6 V %/C nA A %/C S pF 5 9 4700 430 135 33 27 35 35 160 50 95 3 VGS = 10 V, V DS = 250 V, ID = 6 A, R G = 2.00 ns VGS = 10 V, V DS = 250V, I D = 6 A nC IF = IS, VGS = 0 V IF = 10 A, -di/dt = 100 A/s, IF = 10 A, di/dt = 100 A/s, 25 C 125 C 25 C 125 C V ns C 500 tbd tbd tbd Notes (1) (2) Pulse test, t 300 s, duty cycle 2% Microsemi Corp. does not manufacture the mosfet die; contact company for details. Datasheet# MSC0308A |
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